Abstract

Epitaxial Dy1Ba2Cu3O7−δ(001) high‐temperature superconductor thin films on LaAlO3 substrates have been prepared by coevaporation of Dy, BaF2, and Cu and postannealing. The vapors in desired ratio were evaporated from effusion cells in a miniature molecular beam deposition system. The films show critical transition temperature (Tc,0) of 89.5±0.5 K. During process development it was found that single phase Dy1+xBa2−xCu3Oy(001) thin films can be grown (x=0 to 0.3). Their electrical properties were useful in calibration of quartz crystal thin film thickness monitor (FTM) for determination of relationships between the actual vapor arrival rate (flux) and FTM reading.

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