Abstract
A unique methodology due to the effect of stochastic heating is utilized to study the Moisture Diffusivity influence of an elastic semiconductor medium under the effect of photo-thermoelasticity theory. Accurately, random processes are applied at the boundary of the semiconductor medium. The governing equations are expressed in the one-dimensional form (1D). The boundary conditions are considered random; the additional noise is regarded as white noise. The problem is set up to investigate the interaction between moisture diffusivity, thermo-elastic waves, and plasma waves. The investigation is carried out during a photothermal transport procedure while taking moisture diffusivity into consideration. The Laplace transform is used to solve the problem. The numerical solution for field distribution is obtained using the short-time approximation while performing inverse transformations of Laplace. The Wiener process notion has been used to arrive at the solutions for the stochastic case. Silicon (Si) material is used along several sample paths in a numerical study based on stochastic simulation. Additionally, a comparison of the stochastic and deterministic field variable distributions is provided. The effects of thermoelectric, thermoelastic, and reference moisture parameters of the applied force on all physical distributions are discussed graphically.
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