Abstract
ABSTRACTMoiré pattern images have been used to investigate the crystalline quality of thin films deposited on (100)Si substrates. Observations performed on TiSi2 show a three-dimensional growth process and two different epitaxial modes. In the case of GaAs epilayers, it is shown that the residual strains are not uniformly distributed in the layer. Residual strain and threading dislocations are related to imperfections of the misfit dislocation network.
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