Abstract
Remotely doped graded parabolic potential well structures have been grown and studied. Electrons distribute themselves uniformly in a parabolic well, the density being proportional to the curvature or quasidoping in the well. Quasidoped semiconductors are synthesized by molecular beam epitaxy in the GaAs/AlXGa1−XAs system through the digital alloy technique. The analog grading produced by the digital alloy is verified by photoluminescence excitation spectroscopy. Low temperature mobility measurements show higher mobility in these quasidoped semiconductors than in similar real-doped semiconductors. Alloy-disorder scattering is suggested to be the mobility-limiting mechanism in this digital alloy system. Capacitance–voltage profiling analysis of quasidoped semiconductors has been developed, and is used to measure carrier profiles in these structures.
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