Abstract

A small-signal microwave lumped-element circuit model of a sampled grating distributed Bragg reflector (SGDBR) laser monolithically integrated with a semiconductor optical amplifier (SOA) has been derived from the rate equations of electron and photon density. Compared with the classical circuit model for semiconductor lasers, our model takes into account series cascade action of the SGDBR laser and the SOA. The circuit parameters are extracted by a synthetical approach, which combines the global numerical optimization technique with the analytical extraction method using the measured S-parameters of the integrated device for a determined operating wavelength. The modulation response of the SOA-integrated SGDBR laser has been analyzed by this model including parasitic effect.

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