Modulation of vacancy-ordered double perovskite Cs2SnI6 for air-stable thin-film transistors

Abstract

Vacancy-ordered halide double perovskites are promising non-toxic and stable alternatives for their lead- and tin (II)-based counterparts in electronic and optoelectronic applications. Despite extensive theoretical studies on this emerging family of materials, efforts devoted to the chemical modulation of their thin-film properties and their potential application in electronic devices remain rare. Here, we develop a facile one-step solution processing strategy to tune the film quality of cesium tin (IV) iodide (Cs 2 SnI 6 ) perovskite and demonstrate its feasibility in thin-film transistor (TFT) application. We reveal critical roles of precursor stoichiometric ratio and solvent engineering in achieving uniform and highly crystalline Cs 2 SnI 6 films with superior electron mobility. We further modulate the electronic properties by incorporating an external manganese (Mn 2+ ) dopant, achieving high-performance air-stable n-channel TFTs and all-perovskite complementary inverters. We anticipate that the present study would pave the way for expanding the environmentally friendly and stable perovskites toward widespread applications. • Precursor engineering for one-step solution deposition of Cs 2 SnI 6 thin films • Electrical modulation of the Cs 2 SnI 6 perovskite for transistor application • Integrated transistors exhibit appealing electrical performance with high stability Liu et al. report the deposition of eco-friendly vacancy-ordered double perovskite Cs 2 SnI 6 thin films using a one-step solution process. Subsequently, an external atomic doping is adopted to modulate the electrical property of the Cs 2 SnI 6 perovskite. The resulting transistors exhibit appealing electrical performance with highly stable characteristics.