Abstract
Modulation of semiconductor–halfmetal–metal transition in the antiferromagnetic (AF) ordering of bilayer zigzag graphene nanoribbons (BZGNRs) on hexagonal boron nitride (h-BN) heterostructure using the external force field Fext and transverse electric fields Eext (in the presence of interaction with the substrate) was performed within the framework of the density functional theory (DFT). We established critical values of Eext and interlayer distance in the bilayer providing for semiconductor–halfmetal–metal transition in one of electron spin configurations. Our calculations also show that the energy gap Eg in the AF-BZGNR/h-BN(0001) heterostructure can be controlled in a wide range of the Fext and Eext. This makes the AF-8-ZGNR/h-BN(0001) heterostructure being potentially promising for application in spintronic devices.
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