Abstract
Memristors adopting emerging materials are identified as potential construction to meet the demands of high-end technology in the future. To build the memristors capable of achieving reliable and advanced action, the property of resistance switching deserves a lot of attention. In this study, an investigation is presented focusing on the switching characteristics of the structure of MoS2/HfO2/p-Si, the cause of which is mainly attributed to the action of sulfur vacancies. Specifically, the switching characteristic can be greatly enlarged by optical stimulation and regulated by the irradiation position. Owing to the modification of the oxide layer, the growth orientation of the MoS2 base layer on the surface of HfO2 layers alters horizontally. This induces an optimum path for the transport of photocarriers, which effectively takes full advantage of the conductive filaments and reduces the loss in diffusion. Consequently, the level of switching characteristics in light is highly promoted. We hope that these results can make a contribution to related optoelectronic research studies and MoS2-based devices.
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