Abstract

Summary form only given. Quantum interferences (especially destructive interferences) have been a subject of active study over the last decade. Some of examples using these interferences include electromagnetically induced transparency (EIT). Lasers without inversion (LWI), and highly efficient schemes for nonlinear optics. In a practical point of view, the implementation of such interferences in semiconductor devices is very interesting since we cannot control critical parameters in atomic systems. In this report, we suggest a structure in which we can change the phase difference between two intersubband transition matrix elements from 0/spl deg/ to 180/spl deg/ by the external perturbation or variables. We use the interferences between |0>-|2> and |0>-|3> transitions, where |2> and |3> states are broadened by tunneling into the same energy continuum through a thin potential barrier. By controlling the parallel kinetic energy of electrons, we can change the phase difference between them parallel-perpendicular kinetic energy coupling effects which modify the effective potential profiles of the structure. This means we can modulate optical absorption by controlling the sign of quantum interference via the parallel kinetic energy of electrons.

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