Abstract
Grain boundary (GB) conductance of a channel has an immense effect on the device performance of a field effect transistor (FET) fabricated by chemical routes. Here, we report the modulation of intra and inter grain conductance of the channel of SnO2 based FET device by varying electrostatic carrier induction using a polymer gate dielectric. The channel was found highly resistive in the absence of any gate bias, but the channel current (IDS) increased nearly twenty times when VG = 14 V was applied. The threshold gate voltage (VTh) to turn on the channel was measured as low as 2.2 V. Analysis of the experimental results using a suitable theoretical model revealed that the induced carriers (by field effect) play a crucial role to tune the intra grain as well as GB conductance of the FET channel and thus modulating the overall conductance of the FET channel more effectively.
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