Modulation of dual-spin filtering by edge-hybridized pairing of β-SiC7 nanoribbons

Abstract

Atomic capping is a common approach in edge modification to tune band engineering and can be achieved experimentally through hydrogen plasma etching. Based on first-principles calculations, nine symmetric and asymmetric structures are constructed with different numbers of hydrogen atoms passivated at the edge of β-SiC7 nanoribbons. An in-depth study reveals that different edge hydrogenations realize the transition from semiconductors to half-metals to metals, firstly, because different numbers of hydrogen atoms lead to different edge atomic orbital hybridizations, and, more importantly and specifically, because the bands around the Fermi level of β-SiC7 nanoribbons are all derived from the spatially separated edge states, so that arbitrary pairings of upper and lower edge hybridizations are able to diversify the bands near the Fermi level and bring about a richer electronic properties. We also design the metallic H-zSiC7NR-H and semiconducting 2H-zSiC7NR-H into a heterojunction, which possesses good dual spin filtering properties at low bias, can achieve a spin polarization transition from -100 % to 100 %, and exhibits the NDR phenomenon. These findings suggest that β-SiC7 nanoribbons have promising applications in the field of spintronics.