Abstract
Current conduction mechanisms of Hf1−xTixO2-gated metal–oxide–semiconductor (MOS) capacitors depending on various post-annealing temperature (PDA) have been investigated. The sample subjected to 400 °C annealing exhibits superior performance with negligible hysteresis memory window shift (ΔVfb = 0.005 V) and lowest gate leakage current density (5.4 × 10−5 A/cm−2 at Vg = 2 V). In addition, evolution of density of interface traps (Dit), border charger density (Not) and oxide charge density (Qox) as a function of annealing temperature were investigated in details. Detailed electrical measurements reveal that the dominant current conduction behaviors are Poole–Frankel (P–F) emission in the region of low electric fields and Schottky Emission (SE) in the region of high electric fields for gate injection. For substrate injection, however, is mainly via Ohm's conduction, Schottky emission (SE) conduction mechanism serves in low applied field in the samples, respectively.
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