Abstract
We fabricated a hybrid on-chip acousto-electric (AE) and field-effect device to investigate the modulation of acoustic carrier transportation by gate voltage. The device fabrication exploited a surface micromachining aluminum nitride process on a silicon wafer, facilitating an integration of a surface acoustic wave (SAW) delay line and a graphene field-effect transistor. The SAW device induced an AE current in graphene, which scales linearly with the input power and remains essentially constant when subtracting the offset current at different DC biases. At a constant DC bias, the AE current can be modulated by the gate voltage, due to the change of the carrier mobility in graphene. A four-fold enhancement in the AE current was realized when ∼35 V voltage was applied to the gate electrode. The highly integrated device proves to be a powerful tool to understand the AE current in graphene, and since it supports integration for versatile functionality, it opens an avenue to explore the properties of diverse nanomaterials.
Published Version
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