Modulation instability of electromagnetic radiation in narrow-gap semiconductors

Abstract

The modulation instability of electromagnetic radiation propagating in narrow-gap semiconductor plasma is considered. In a dense $n$-doped InSb semiconductor plasma the instability can develop in a picosecond time scale for the field intensities $E\ensuremath{\approx}1.6\ifmmode\times\else\texttimes\fi{}{10}^{5} \mathrm{V}/\mathrm{c}\mathrm{m}$. The numerical simulations confirm the analytical predictions that a modulated localized long pulse splits into a chain of solitonlike structures. Possible applications of this effect to generate short picosecond pulses and the dynamical light grating of the semiconductor at midinfrared wavelengths are suggested.