Abstract
Metal contact to SiC is not easy to modulate since the contact can be influenced by the metal, the termination of the SiC, the doping, and the fabrication process. In this work, we introduce a method by inserting a thin Al2O3 layer between metal and SiC to solve this problem simply but effectively. The Al2O3/n-SiC interface composition was obtained with X-ray photoemission spectroscopy, and the electrical properties of subsequently deposited metal contacts were characterized by current–voltage method. We can clearly demonstrate that the insertion of Al2O3 interfacial layer can modulate the current density effectively and realize the transfer between the Schottky contact and ohmic contact.
Highlights
Silicon carbide is a promising material for numerous electronic applications due to its wide bandgap, high breakdown electric field, high thermal conductivity, and high saturation velocity [1]
We demonstrate the modulation of the current density in the metal/n-SiC contact by inserting a thin Al2O3 layer into a metal-insulator-semiconductor (MIS) structure
It is clear that the Si 2p3 spectrum can be fitted with two Gaussian peaks which correspond to Si-C bonds (100.9 eV, full width at half-maximum (FWHM) = 2.27 eV)
Summary
Silicon carbide is a promising material for numerous electronic applications due to its wide bandgap, high breakdown electric field, high thermal conductivity, and high saturation velocity [1]. These excellent properties make SiC suitable for high-temperature, high-power, and high-frequency applications. According to the thermionic emission model [3], the direct reflection of the SBH is the reverse current density, and by controlling the Schottky barrier height, we can modulate the current density and acquire the needed contact type without modifying the fabrication process
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