Abstract
We report the modulation characteristics of individually addressable pixels in hybrid 4 × 3 gallium-nitride (GaN)-based light-emitting-diode (LED) arrays, where the pixels in each array range from 30 μm to 300 μm in diameter and have peak emission wavelength at ∼448 nm. The influence of device active area on modulation performances was investigated. Due to the capability to be easily driven at higher current density, the smaller area micro-LED pixels exhibit higher modulation bandwidths than the larger area pixels. The highest −3 dB modulation bandwidth of 161 MHz at the bias current of 100 mA was achieved in the micro-LED with a diameter of 30 μm. By comparison of results of different diameters, it was found that the carrier density, rather than the diameter itself, is a key factor in determining the modulation bandwidth. Such micro-LEDs show high potential for free-space high-speed visible light communication applications.
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