Modulating the nonlinear absorption response of SnOx thin films via phase engineering.

Abstract

Phase (composition) is known to play a key role in determining the electronic and optical properties of amorphous oxide semiconductors. In this work, modulating the ultrafast nonlinear optical (NLO) response of SnO2 and SnO thin films by tuning oxygen partial pressure during film sputtering is explored. Femtosecond Z-scan results demonstrate that intermediate phases have no profound impact on the two-photon absorption (TPA) response of SnO2 and SnO films. Interestingly, the magnitude of the effective nonlinear absorption coefficient (βeff) of both intermediate SnO2-x and SnOx are enhanced after the change of Sn2+/Sn4+ composition ratio, as measured by picosecond Z-scan technique. Femtosecond degenerate pump-probe measurements show that intermediate phases accelerate the carrier trapping and improve the defect-related carrier absorption in SnOx (SnO-rich) film, while intermediate phase suppress the TPA response of SnO2-x (SnO2-rich) films, therefore carrier-induced absorption dominates the NLO behavior of SnO2-x film on picosecond regime. Our results indicate a simple and effective way to modulate the NLO response of transparent conductive oxide SnO2 and SnO.