Modulating Surface Morphology and Thin-Film Transistor Performance of Bi-thieno[3,4-c]pyrrole-4,6-dione-Based Polymer Semiconductor by Altering Preaggregation in Solution.

Abstract

Due to their strong intermolecular interactions, polymer semiconductors aggregate in solution even at elevated temperature. With the aim to study the effect of this kind preaggregation on the order of thin films and further transistor performance, bi-thieno[3,4-c]pyrrole-4,6-dione and fluorinated oligothiophene copolymerized polymer semiconductor P1, which shows strong temperature-dependent aggregation behavior in solution, is synthesized. Its films are deposited through a temperature-controlled dip-coating technique. X-ray diffraction and atomic force microscopy results reveal that the aggregation behavior of P1 in solution affects the microstructures and order of P1 films. The charge transport properties of P1 films are investigated with bottom-gate top-contacted thin-film transistors. The variation of device performance (from 0.014 to 1.03 cm2 V–1 s–1) demonstrates the importance of optimizing preaggregation degree. The correlation between preaggregation degree and transistor performance of P1 films is explored.