Modulating mechanism on the temperature dependent resistivity of ceramic dielectrics and its advantage over polymer insulation

Abstract

Volume resistivity of polymer dielectrics reduces significantly with the increase of temperature. As a result, in direct current (DC) power apparatus or electronic device, temperature gradient over the material can result in considerable electric field distortion which greatly threats the polymer insulation. Advanced ceramic dielectrics are promising to be alternative to polymer insulation to deal with this issue. In this paper, Al2O3 and Si3N4 ceramic materials with different ion doping concentrations have been manufactured. Temperature dependent resistivity characteristics of the ceramics are obtained and compared with typical polymer dielectrics. Conduction models of the ceramic dielectrics are applied to understand their temperature dependent resistivity and its modulating mechanism. Effect of ion doping on the temperature dependent resistivity has been obtained and analyzed which agrees well with their charge trapping property acquired by thermal stimulation depolarization current measurement, based on which the method to modulate the temperature stability of material resistivity have been proposed. Finally, a comprehensive comparison between ceramics and polymers in high voltage DC applications have been made which further proves the advantage of ceramic dielectrics.