Abstract
Atomic-scale smooth thin films are keys to successful integration and proper function of many multilayer-structured devices. However, the intrinsic island-like growth mode prevents human being from realizing such ultrasmooth films of many important functional materials. To solve this problem, we propose a negative entropy-infusing method that employs evanescent waves to enhance the downward interlayer diffusion of adatoms and thus transform the island-like growth mode to the layer-by-layer growth mode. The formulas of the optical force and the lowered diffusion barrier were derived, and the application of this theory on a simplified example demonstrates significantly improved surface morphologies through numerical simulations.
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