Abstract
The modulated photocurrent spectroscopy results obtained for intrinsic, undoped a-Si:H are described. The measured midgap density of states consists of broad bands of neutral and charged defect states, between which there is orders of magnitude difference in carrier capture efficiency. Amplitude of the neutral defect band is considerably larger than that of the charged defect band, in both thermally annealed and light soaked states. Implications of these experimental findings are discussed in connection with the model of defect structure based on the defect pool concept.
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