Abstract
Modulated photocurrent measurements were performed on amorphous boron,β-rhombohedral boron, and Al–Pd–Re quasicrystal. For the quasicrystal, this is the first report on photoconductivity. The data obtained for amorphous boron are analyzed by a typical model which assumes interband photocarrier generation and trap-limited conduction. Those forβ-rhombohedral boron and the quasicrystal are analyzed by a modified model which takes account of two excitation processes for carriers: (i) photoexcitation directly to conduction (or valence) band and (ii) that to localized states followed by thermal excitation into conduction (or valence) band. The results indicate that the localized states significantly contribute to photoconduction. The existence of large densities of localized states is suggested both forβ-rhombohedral boron and quasicrystals.
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