Abstract
Modulated beam and RHEED techniques are used to study the thermal decomposition of TMGa under MOMBE conditions and the data compared to conventional MBE growth. The growth rate of GaAs using TMGa and As 2 or As 4 is a complex function of substrate temperature and TMGa flux. The presence of CH 3 (no CH 4 or C 2H 6 detected) desorbing from the surface suggests the pyrolysis of TMGa via sequential release of methyl radicals. The amount of desorbing Ga species shows a general decrease with increasing substrate temperature. The reaction mechanism for the decomposition of TMGa under MOMBE conditions is complicated with at least one step dominating the growth rate of GaAs.
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