Abstract
Butanone is a toxic, flammable and explosive volatile gas, and the rapid detection of butanone can help avoid safety accidents and protect human lives. However, the detection of butanone remains difficult to meet the practical requirements. Inappropriate resistance and insufficient reactivity are challenges for butanone sensing materials. Constructing amorphous and crystalline heterojunctions and modulating the electronic structure of the heterojunction interface promise to coordinate the resistance and reactive sites. In this work, the cubic heterostructure of crystalline ZnO/amorphous ZnSnO3 was constructed and oxygen vacancies and Lewis acid base were regulated by In atoms. 5 wt% In-ZnO/ZSO response for 100 ppm butanone was 166.7 at 280 °C, 7.1 times higher than ZnO/ZSO, with 20 ppb detection limit and 1.5 s response time. The excellent butanone response attributes to electronic structure modulation in the amorphous heterojunction by In atom. The oxygen vacancies increase the Lewis basicity of the metal atoms and enhance the butanone response.
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