Modulate Work Function of Ni-FUSI metal gate by implanting Yb

Abstract

This paper investigates the work function adjustment of Ni-FUSI metal gate by implanting Yb into poly-Si gate before silicidation. It is obvious that implanting Yb into poly-Si before silicidation can modulate the work function of Ni-FUSI metal gate efficiently and increasing dose can extend the range of work function modulation. The ability of work function modulation by Yb implanting is excellent. It can satisfy the work function requirement of high performance NMOS devices and highly compatible with CMOS processes.