Abstract
Modeling of noise sources in MOS devicesWe present in this work an investigation of the physical origins of the two main noise sources in MOS devices. In the first part, we interest to the flicker noise and its detailed derivation’s. The thermal noise is discussed in the second part with the explanation of the channel length impact in this noise. At next, we present briefly the induced gate noise.
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Schedule a callMore From: Afrique Science: Revue Internationale des Sciences et Technologie
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