Abstract
A NEW MODELING OF THE CHARACTERISTICS OF GaAs MESFET'S: A new approach for I—V standard model is proposed. This approach allowed to conceive applicable model for MESFET's operating in the turn-one or pinch-off region, and valid for the short-channel and the long-channel MESFET's, in which the two-dimensional potential distribution contributed by the depletion layer under the gate is obtained by conventional . 1D approximation. The drain current is decomposed into two components; the first is due to the conduction current flowing through the conduction channel, and the second component is a result of the current flowing through the space charge region resulting from the injection of the channel electrons into this last region. Moreover, comparison between the proposed analytical model and the experimental data are made and good agreement is obtained. In the end, this model is applied to estimate the cut-off frequency of the MESFET-GaAs from these static characteristics. This estimation is based • on the theoretical calculation of the transconductance and the gate capacitance of the device.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
