Abstract
Abstract Piezoelectric effects on PL properties are clarified in InGaN quantum wells (QWs) of 1–10 nm wide at 17 K. An extremely large change in PL peak energy (up to 200 meV) and PL decay time (two orders of magnitude) are found in a 10 nm‐wide QW with increasing excitation intensity. We compare the distinctive characteristics of the field effects with QCSE in GaAs QWs and discuss possible optical device functions. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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