Modified variational calculation of the zero field mobility of polar semiconductors

Abstract

This paper describes a method of calculating the low field mobility if there exists no universal relaxation time. Here, the drift term in the distribution function is eliminated from the equations connecting the first two terms of the Legendre expansion of the distribution function, and the momentum balance is applied to determine the parameter of a one-parametric trial function used for the isotropic part of the distribution function. The mobility is then calculated via the energy balance relation. Forn-type GaAs the zero field lattice mobilities ofμ[000]=12,100 cm2/Vsec andμ[000]=160 cm2/ Vsec at 300 °K are obtained in this way.