Abstract
The modification of thermoelectric figure of merit was estimated from enhanced mobility of [100] oriented beta-FeSi2 film. beta-FeSi2 on Si(001) substrate was prepared by molecular beam epitaxy method using an Fe source. The crystallographic orientation of beta-FeSi2 film on Si(001) substrate was characterized by using X-ray diffraction. Using scanning electron microscopy, surface morphology and film thickness of samples were observed and estimated, respectively. The mobility of beta-FeS2 film on Si(001) substrate were also characterized by Hall measurement at room temperature. A part of the enhancement of figure of merit was evaluated as the functions of mobility and crystallographic orientation of samples.
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