Abstract
A technique for eliminating mesa sidewall contact problems in InP-based HEMTs has been developed. This technique uses T-gates with integrated micro-airbridges which span the critical region at the edge of the mesa avoiding contact between the gate and the mesa sidewall. The airbridges are fabricated by modifying the electron-beam exposure pattern for T-gates.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
