Abstract

This work proposes new chemical and mechanical materials and techniques for III-V semiconductor NW/silicone membrane formation and optoelectronic device fabrication. Molecular beam epitaxy (MBE)-synthesized n-, p- and i-GaP NWs were encapsulated by introduced G-coating method into synthesized polydimethylsiloxane- graft -polystyrene and released from the Si growth substrate. The fabricated membranes were contacted with different materials including single-walled carbon nanotubes or ferrocenyl-containing polymethylhydrosiloxane with and without multi-walled carbon nanotubes doping. The electrical connection of the fabricated membranes was verified by electron beam induced current (EBIC) spectroscopy. The developed methods and materials can be applied for fabrication of high quality flexible inorganic optoelectronic devices.

Highlights

  • The appealing properties of organic light emitting diodes (OLEDs), i. e. relatively easy and inexpensive fabrication, and efficient electroluminescence (EL) allowed the OLED-based industry to conquer a significant market share

  • We focus on single wall carbon nanotubes (CNT) (SWCNT) and advanced ferrocenyl-containing polymethylhydrosiloxane (FPS) as contacting layer

  • The fabricated n- and p-GaP NW/PDMS-St membranes were processed with Schottky and near-ohmic contacts, respectively

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Summary

Introduction

The appealing properties of organic light emitting diodes (OLEDs), i. e. relatively easy and inexpensive fabrication, and efficient electroluminescence (EL) allowed the OLED-based industry to conquer a significant market share. E. relatively easy and inexpensive fabrication, and efficient electroluminescence (EL) allowed the OLED-based industry to conquer a significant market share. Organic materials are far behind the inorganic materials in terms of stability and external quantum efficiency (EQE) of EL in optical range, especially in blue and red region [Sal2019, Mon2019], which for inorganic devices becomes close to 100%. Are envisioned to be the materials for the LEDs with the efficiency close to the theoretical limit. The recent commercial application of OLEDs instead of inorganic materials is explained mainly by difficulties of combination of different radiative materials necessary for an RGB full color screen. The mainstream thin film technology is hard to adapt for small high resolution screen, because it requires either advanced post-growth processing, or combination of very different crystalline materials [Kle2013]. The flexible devices fabrication based on thin films imposes even greater complications, i. e. ultra thin wafer epitaxy or release of the synthesized material from the wafer [Park2009]

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