Abstract
Modifications to the Schottky barrier heights of Al: GaAs diodes were achieved through the use of heavily doped semiconductor interfacial layers. These contacts were grown entirely in an ultra-high vacuum molecular beam epitaxy system, allowing the preparation of nearly ideal metal: semiconductor structures. We used p+-GaAs layers (NA=1018-1020 cm-3, tp=50–360 A) at Al: n-GaAs interfaces (ND=5×1016 cm-3) to reproducibly increase the barrier height from 0.79 eV to 1.24 eV, with minimal degradation of the diode ideality factor (n=1.03–1.21). Our modeling of these diodes utilized the results of the unified defect model for surface and interface states on III-V compound semiconductors. The results of current-voltage and capacitance-voltage measurements on these diodes are compared with theory.
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