Abstract
We modified the surface of a polyvinyl alcohol (PVA) layer by self assembly monolayer technique using a fluorine substituted silane compound (1H,1H,2H,2H-perfluorooctyl-trichlorosilane: FTS) to protect a pentacene thin-film transistor (TFT) from O2 and H2O. Surface modified PVA showed very low surface energy with water contact angle of 106.2 degrees. Surface treatment of PVA layer on pentacene TFT device was done in toluene solvent and we did not observe any damage to the PVA layer or pentacene TFT devices during surface modification process. Pentacene TFT with surface modified PVA passivation layer exhibited very stable TFT operation with almost no field effect mobility drop or threshold voltage shift up to 400 hrs. The performance of unpassivated OTFTs exponentially degraded and almost failed in 290 hrs. We propose that modified PVA layer can be used as a good passivation layer for oxygen and water in OTFT.
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