Abstract
We develop a new photoresist etch mask process to etch (001) wafers to obtain (111) B‐faceted v‐grooves for channeled substrate laser applications. We investigate the use of and solutions to remove native oxide layers prior to v‐groove etching. We also study the relationship between the photoresist mask undercutting and the bath temperature used for native oxide removal. The degree of undercutting in photoresist mask can be reduced about two times by increasing the bath temperature from room temperature to 48°C during the oxide removal process. We also identify two important factors that control the mask undercutting rates as (i) the thickness of native oxide on surface and (ii) the chemical reaction between and the oxide removal bath solution.
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