Modified phonon confinement model for size dependent Raman shift and linewidth of silicon nanocrystals

Abstract

A modified phonon confinement model considering the size distribution, an improved phonon dispersion curve and a confinement function is developed for the calculation of size dependent Raman spectra of the silicon (Si) nanocrystals. The model is capable of simultaneous calculations of the Raman shift, intensity and linewidth. The calculated size dependent redshift and linewidth of Raman spectra are in good agreement with the available experimental data in literature and better than previously reported theoretical results. The rapid rise in the redshift and linewidth for relatively smaller Si nanocrystals are well reproduced. The asymmetric behavior of Raman spectra is also obtained from the present model.