Abstract
This paper proposes a modified readout circuit for ion sensitive field effect transistor (ISFET). The work will make use of Si3N4-Gate ISFET in the development of the system. In addition, a bandgap reference circuit was developed to serve as an internal reference voltage for the readout circuit. The circuit was implemented using the MXIC 0.5um 1P2M CMOS technology. The design offers a sensitivity of 54.3mV/pH and a temperature coefficient of 1.5mV/°C. According to the transient analysis simulation using a bipolar transistor, the system has a settling time of 110us.
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