Abstract
We have reported a modified V-shaped external cavity, which is constructed around a commercial diode laser operating at a center wavelength of λ=785 nm by adding a new coated glass plate with about 50% reflectivity to the cavity. This allows simultaneous dual-wavelengths operation in the vicinity of Δ ν min =0.18 THz to Δ ν max =0.22 THz, which can be used as laser source for terahertz generation either for semiconductor devices or nonlinear schemes.
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