Abstract
The mathematical diode model currently used in most circuit simulations is not able to fully account for the reverse recovery characteristics. This is caused by the quasistatic diffusion charge equation used in the model. A proposed modification to the charge equation is presented. The modification has been test-implemented in PSPICE and Saber, two of the most widely used circuit simulators in the industry. It has been verified experimentally that the new model is able to describe the diode reverse recovery behaviour more realistically without degrading the convergence properties of the simulators.
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