Abstract
The influence of implantation of Si+ ions with energies of 30, 60, and 120 keV was studied on the dark conductivity, photoconductivity, hydrogen concentration, microstructure parameter, and special features of the ultrasoft X-ray emission spectra of a-Si:H films that were deposited at Ts=300°C by the dc-MASD and rf-PECVD methods and that differed in initial structural characteristics.
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