Abstract
We modified single- and few-layer nano-sized graphene films deposited by pulsed laser deposition (PLD) on ∼300-nm-thick SiO2/Si substrates. The samples were irradiated by a UVC lamp (wavelength of 254 nm) for 15 and 30 minutes in air atmosphere. The light was directed almost parallel (about 2 - 2.5 arcdeg declination angle) to the films’ surface. The influence of the modification was evaluated by ellipsometry and X-ray photoelectron and Raman spectroscopies. The results showed that the irradiation caused an increase of the C-O/C-OH bond and a decrease or the complete disappearance of the -C=O/-COOH bond. The structural quality of the graphene films was improved moderately after a 15-min UVC treatment.
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