Abstract
ABSTRACTPlatinum electroless deposition on Si(lOO) from HF solutions is hindered on n+ substrates as compared to p-substrates defining an induction period and displaying a more local behavior. The results are discussed in terms of a global electrochemical process. Platinum reduces injecting holes to the silicon valence band and silicon atoms oxidizes. The final morphological situation is a porous silicon layer which contains platinum nuclei formed by filling pits originated in the first stages of the deposition process.
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