Abstract
In this study, we have studied the thermal treatment effect not only on the optical and structural properties of QDIP structure but also device performance of the QDIP. The thermal treatment of InAs/GaAs QDIP structure have been carried out at the temperature range from 650 o C and 850 o C with SiO 2 capping layer for 1 minute under the N 2 -gas ambient. After the thermal treatment, the structure was processed to QDIP and its device characteristics such as dark current and IR photo-response were measured. Results show that the photoluminescence (PL) peak was blue-shifted from 1288nm to 1167nm while the peak of photo-currents spectrum was red-shifted from 7.6 um to 7.8 um after the thermal treatment. It is also noted that the thermally treated sample showed the increase of photo-currents, which resulted in the increase of detectivity.
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