Abstract
Understanding the physics behind the operational mechanism of Electrolyte-Gated Organic Field-Effect Transistors (EGOFETs) is of paramount importance for the correct interpretation of the device response. Here, we report the systematic functionalization of the gate electrode of an EGOFET with self-assembled monolayers with a variety of dipolar moments showing that both the chemical nature and the monolayer density influence the electrical characteristics of the device.
Highlights
Nowadays, fabrication of organic electronic components is accomplished with low-cost and low-temperature methods over a large area and virtually on every substrate
We selected to use as active material a blend of DBTTF with PS (i.e., DBTTF : PS) deposited by the Bar-Assisted Meniscus Shearing (BAMS) technique following the previously reported conditions.[13,29]
It has been shown that this methodology can produce highly crystalline lms with high reproducibility, which can be applied as active materials in Organic Field-Effect Transistors (OFETs) as well as in Electrolyte-Gated Organic Field-Effect Transistors (EGOFETs) exhibiting excellent performances.[29,31,33]
Summary
Fabrication of organic electronic components is accomplished with low-cost and low-temperature methods over a large area and virtually on every substrate. By the application of an electric eld along the dielectric (i.e., gate-source voltage, VGS) combined with a longitudinal electric eld (i.e. drain-source voltage, VDS) the conductivity along the rst OSC molecular monolayers close to the dielectric is modulated. These devices are highly sensitive to both the OSC/electrode and OSC/ dielectric interfaces.[1,2] different strategies have been devised to modify such interfaces in order to tune and optimize the nal device performance. The surface modi cation by means of self-assembled monolayers (SAMs) represents a valuable and widely explored route in organic electronics due to its versatility and simplicity.[3,4]
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