Abstract
The structure of gadolinium gallium garnet (GGG) single crystals before and after implantation by He + ions has been investigated using highresolutio n Xray diffraction methods and the generalized dynamic theory of Xray scattering. The main types of growth defects in GGG single crystals and radiation� induced defects in the ionimplanted layer have been de termined. It is established that the concentration of dislocation loops in the GGG surface layer modified by ion implantation increases and their radius decreases with an increase in the implantation dose.
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