Abstract
The goal of this study was the development of a method for the modification of a quantum dot (QD) structure in Ge/Si nanostructures by pulsed laser irradiation. The Ge x Si 1 - x QD structures were analyzed using data furnished by Raman spectroscopy. Frequency-dependent admittance measurements were used to study the energy spectrum of holes in the Ge/Si heterostructures with Ge x Si 1 - x QDs before and after the laser treatment. The obtained experimental data show that laser treatment makes it possible to reduce the sheet density of QDs, modify their composition, and increase the average size. The most important result is that the QD parameters become more uniform after the treatment with nanosecond laser pulses. In a sample with ODs of 8-nm average lateral size (six monolayers of Ge), the scatter of energy levels in the QD array is reduced by half after the treat- ment with 10 laser pulses.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
