Abstract
The photoluminescence properties of as-deposited and 90 MeV Si ion irradiated fullerene films are reported. The irradiation of fullerene films leads to some enhancement or quenching in molecular transition intensities (photoluminescence intensities) depending on the ion fluence. These effects are explained in terms of lowering in the energy level symmetry resulting from induced chemical disordering. The structural modifications occurring upon irradiation were investigated using Fourier transform infrared and UV-vis spectroscopies.
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