Abstract
III-V Dilute Nitride multi-quantum well structures are currently promising candidates to achieve 1 sun efficiencies of >40% with multi-junction design (InGaP/ GaAs/ GaAsN/ Ge). In other works, we have discussed the design having III-V Dilute Nitride GaAsN multi-quantum well (MQW) structures with resonant tunneling setup in the intrinsic region, in order to improve the response potentially yielding 1 sun efficiencies greater than 40%. Earlier efforts in this direction had yielded samples with considerable incorporation of N at the QW/barrier interface, leading to the formation of nitridation and reducing the overall quantum efficiency. In this work we discuss the results of the growth of MQW solar cells in MBE, with a modified run-vent system for the RF N-plasma setup aimed at increasing the sharpness of the well-barrier transition, and the change in quality of the quantum wells grown.
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