Abstract
The review of the results on the optical contrast formation in a-Si 1− x C x : H films by ion implantation of Sn + and Ge + is presented in this paper. The a-Si 1− x C x : H films were deposited by RF magnetron co-sputtering of silicon and graphite in Ar+H 2 atmosphere. The expected optical effect which is an absorption edge shift to the lower photon energies accompanied by a considerable increase of the absorption coefficient was observed. This effect is more pronounced with an increase of the dose. Infrared (IR), photoelectron spectroscopy (XPS) and Mössbauer spectroscopy measurements were used to study the bond configurations of implanted films. Raman scattering and photodeflection spectroscopy (PDS) show the increase of the short-range disorder and of the density of the states in the gap with the dose of the implanted ions. The measurements reveal that ion implantation introduces an additional disorder in the films as well as leads to their chemical modification, which is related to the changes of the optical properties.
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