Abstract
We present an overview concerning the modification of properties of HgCdTe solid solutions and related Hg-containing materials under surface treatment with low-energy (60–2000 eV) ion beams. The conditions for conductivity-type conversion in p-material, dose, and time dependences of the depth of the conversion layer are analyzed. The modification of electrical properties of n-type material subjected to ion-beam treatment is discussed. The suggested mechanisms of conductivity-type conversion under low-energy ion treatment of HgCdTe doped with vacancies or acceptor impurities are regarded. Properties of p-n junctions produced by this technique are reviewed, and electrical and photoelectric parameters of HgCdTe IR photodetectors fabricated by low-energy ion treatment are analyzed. Several examples of novel device structures developed with the use of the method are presented.
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